Technical parameters/power supply voltage (DC): 2.70V (min)
Technical parameters/power supply current: 110 mA
Technical parameters/number of pins: 64
Technical parameters/digits: 8, 16
Technical parameters/access time: 110 ns
Technical parameters/memory capacity: 32000000 B
Technical parameters/access time (Max): 110 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 3V, 3.3V
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 2.7 V
Package parameters/number of pins: 64
Encapsulation parameters/Encapsulation: BGA-64
External dimensions/packaging: BGA-64
Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Other/Manufacturing Applications: Industrial, consumer electronics, communication and networking, computers and computer peripherals
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
S29GL256P11FFI010
|
Cypress Semiconductor | 类似代替 | BGA-64 |
GL-P 系列 256 M (32 M x 8) 3.6 V 110 ns 表面贴装 闪存 - FBGA-64
|
||
S29GL256P11FFIV12
|
Spansion | 完全替代 | LBGA |
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8Bit/16Bit 110ns 64Pin Fortified BGA T/R
|
||
|
|
Cypress Semiconductor | 完全替代 | BGA |
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8Bit/16Bit 110ns 64Pin Fortified BGA T/R
|
||
S29GL256P11FFIV23
|
Spansion | 完全替代 | BGA |
NOR闪存 256MB 2.7-3.6V 110ns Parallel NOR闪存
|
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