Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 108 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 50 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 11.3A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TDSON-8
External dimensions/packaging: TDSON-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: PB free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSZ12DN20NS3G
|
Infineon | 完全替代 | PowerTDFN-8 |
Infineon OptiMOS™3 功率 MOSFET,100V 及以上
|
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