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Model BSZ12DN20NS3G
Description Infineon OptiMOS™3 Power MOSFET, 100V and above
Product QR code
Brand: Infineon
Packaging PowerTDFN-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.3  yuan 1.3yuan
5+:
$ 1.7564
25+:
$ 1.6263
50+:
$ 1.5352
100+:
$ 1.4962
500+:
$ 1.4701
2500+:
$ 1.4376
5000+:
$ 1.4246
10000+:
$ 1.4051
Quantity
5+
25+
50+
100+
500+
Price
$1.7564
$1.6263
$1.5352
$1.4962
$1.4701
Price $ 1.7564 $ 1.6263 $ 1.5352 $ 1.4962 $ 1.4701
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1035) Minimum order quantity(5)
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Technical parameters/number of channels: 1

Technical parameters/dissipated power: 50 W

Technical parameters/drain source voltage (Vds): 200 V

Technical parameters/rise time: 4 ns

Technical parameters/Input capacitance (Ciss): 510pF @100V(Vds)

Technical parameters/rated power (Max): 50 W

Technical parameters/descent time: 3 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 50 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: PowerTDFN-8

External dimensions/length: 3.4 mm

External dimensions/width: 3.4 mm

External dimensions/height: 1.1 mm

External dimensions/packaging: PowerTDFN-8

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSC12DN20NS3G BSC12DN20NS3G Infineon 完全替代 TDSON-8
OptiMOSTM3功率三极管 OptiMOSTM3 Power-Transistor
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