Technical parameters/drain source resistance: 10 Ω
Technical parameters/dissipated power: 0.25 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-75-3
External dimensions/length: 1.68 mm
External dimensions/width: 0.86 mm
External dimensions/height: 0.8 mm
External dimensions/packaging: SC-75-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1032R-T1-E3
|
Vishay Siliconix | 功能相似 | SC-75 |
MOSFET N-CH 20V 140mA SC-75A
|
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