Technical parameters/drain source resistance: 5.00 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 250mW (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±6.00 V
Technical parameters/Continuous drain current (Ids): 200 mA
Technical parameters/dissipated power (Max): 250mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SC-75
External dimensions/packaging: SC-75
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1032R-T1-GE3
|
Vishay Semiconductor | 功能相似 | SC-75 |
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 5Ω; ID 140mA; SC-75A (SOT-416); PD 0.25W(1/4W)
|
||
SI1032R-T1-GE3
|
Vishay Siliconix | 功能相似 | SC-75-3 |
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 5Ω; ID 140mA; SC-75A (SOT-416); PD 0.25W(1/4W)
|
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