Technical parameters/drain source resistance: 1.4 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 510 mW
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 18.5pF @30V(Vds)
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/height: 1 mm
External dimensions/packaging: SOT-363
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS138PS
|
NXP | 功能相似 | SOT-363 |
NXP BSS138PS 双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
|
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