Technical parameters/number of pins: | 6 |
|
Technical parameters/drain source resistance: | 0.9 Ω |
|
Technical parameters/polarity: | Dual N-Channel |
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Technical parameters/dissipated power: | 420 mW |
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Technical parameters/threshold voltage: | 1.2 V |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Continuous drain current (Ids): | 0.32A |
|
Technical parameters/Input capacitance (Ciss): | 38pF @10V(Vds) |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 0.32 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-363 |
|
Dimensions/Length: | 2.2 mm |
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Dimensions/Width: | 1.35 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-363 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Cut Tape (CT) |
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Other/Manufacturing Applications: | Industrial, Power Management |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1926DL-T1-E3
|
Vishay Semiconductor | 功能相似 | SOT-363 |
双N通道60 -V （D -S ）的MOSFET Dual N-Channel 60-V (D-S) MOSFET
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Vishay Intertechnology | 功能相似 | SC-70-6 |
双N通道60 -V （D -S ）的MOSFET Dual N-Channel 60-V (D-S) MOSFET
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