Technical parameters/drain source resistance: 78 mΩ
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 8 V
Technical parameters/Continuous drain current (Ids): 1.6A
Technical parameters/rise time: 40 ns
Technical parameters/Input capacitance (Ciss): 650pF @4V(Vds)
Technical parameters/descent time: 60 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/packaging: SOT-363-6
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1499DH-T1-E3
|
VISHAY | 完全替代 | SC-70-6 |
MOSFET P-CH 8V 1.6A SC70-6
|
||
SI1499DH-T1-E3
|
Vishay Siliconix | 完全替代 | SC-70-6 |
MOSFET P-CH 8V 1.6A SC70-6
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review