Technical parameters/drain source resistance: | 78 mΩ |
|
Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/drain source voltage (Vds): | -8.00 V |
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Technical parameters/Continuous drain current (Ids): | 1.60 A |
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Technical parameters/rise time: | 40 ns |
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Technical parameters/Input capacitance (Ciss): | 650pF @4V(Vds) |
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Technical parameters/descent time: | 60 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SC-70-6 |
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Dimensions/Packaging: | SC-70-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 3000 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1499DH-T1-GE3
|
VISHAY | 完全替代 | SOT-363-6 |
Trans MOSFET P-CH 8V 1.6A 6Pin SC-70 T/R
|
||
SI1499DH-T1-GE3
|
Vishay Semiconductor | 完全替代 | SC-70 |
Trans MOSFET P-CH 8V 1.6A 6Pin SC-70 T/R
|
||
SI1499DH-T1-GE3
|
Vishay Siliconix | 完全替代 | SC-70-6 |
Trans MOSFET P-CH 8V 1.6A 6Pin SC-70 T/R
|
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