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Model SI2392DS-T1-GE3
Description MOSFET N-CH 100V 3.1A SOT-23
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Brand: Vishay Siliconix
Packaging SOT-23-3
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6516) Minimum order quantity(1)
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Technical parameters/dissipated power: 1.25W (Ta), 2.5W (Tc)

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Input capacitance (Ciss): 196pF @50V(Vds)

Technical parameters/dissipated power (Max): 1.25W (Ta), 2.5W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOT-23-3

External dimensions/packaging: SOT-23-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2392ADS-T1-GE3 SI2392ADS-T1-GE3 Vishay Siliconix 完全替代 SOT-23-3
MOSFET N-CH 100V 3.1A SOT-23
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