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Model SI2392ADS-T1-GE3
Description MOSFET N-CH 100V 3.1A SOT-23
Product QR code
Brand: Vishay Siliconix
Packaging SOT-23-3
Delivery time
Packaging method
Standard packaging quantity 1
1.39  yuan 1.39yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2866) Minimum order quantity(1)
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Technical parameters/dissipated power:

1.25W (Ta), 2.5W (Tc)

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Input capacitance (Ciss):

196pF @50V(Vds)

 

Technical parameters/dissipated power (Max):

1.25W (Ta), 2.5W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Packaging:

SOT-23-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2392DS-T1-GE3 SI2392DS-T1-GE3 Vishay Siliconix 完全替代 SOT-23-3
MOSFET N-CH 100V 3.1A SOT-23
PDF
SI2392DS-T1-GE3 SI2392DS-T1-GE3 Vishay Semiconductor 完全替代 SOT-23-3
MOSFET N-CH 100V 3.1A SOT-23
PDF

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