Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.039 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.25 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): -4.70 A
Technical parameters/rise time: 43 ns
Technical parameters/Input capacitance (Ciss): 1020pF @10V(Vds)
Technical parameters/rated power (Max): 750 mW
Technical parameters/descent time: 48 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 750mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Diodes Zetex | 功能相似 | SOT-23 |
DMG3415U-7 编带
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VISHAY | 类似代替 | SOT-23-3 |
P 通道 MOSFET，8V 至 20V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
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SI2323DDS-T1-GE3
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Vishay Semiconductor | 类似代替 | SOT-23 |
P 通道 MOSFET，8V 至 20V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
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SI2323DS-T1-E3
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Vishay Semiconductor | 类似代替 | TO-236 |
P通道20 -V （D -S ）的MOSFET P-Channel 20-V (D-S) MOSFET
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