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Model SI2323DDS-T1-GE3
Description P Channel MOSFET, 8V to 20V, Vishay Semiconductor # # MOSFET transistor, Vishay Semiconductor
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-23
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.09  yuan 1.09yuan
5+:
$ 1.4675
25+:
$ 1.3588
50+:
$ 1.2827
100+:
$ 1.2501
500+:
$ 1.2283
2500+:
$ 1.2011
5000+:
$ 1.1903
10000+:
$ 1.1740
Quantity
5+
25+
50+
100+
500+
Price
$1.4675
$1.3588
$1.2827
$1.2501
$1.2283
Price $ 1.4675 $ 1.3588 $ 1.2827 $ 1.2501 $ 1.2283
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8653) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.032 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 1.7 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1.7 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23

External dimensions/length: 3.04 mm

External dimensions/width: 1.4 mm

External dimensions/height: 1.02 mm

External dimensions/packaging: SOT-23

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2323DS-T1-GE3 SI2323DS-T1-GE3 Vishay Intertechnology 功能相似 TO-236
VISHAY SI2323DS-T1-GE3 晶体管, MOSFET, P沟道, -3.7 A, -20 V, 0.031 ohm, -4.5 V, -1 V
PDF
SI2323DS-T1-GE3 SI2323DS-T1-GE3 VISHAY 功能相似 SOT-23-3
VISHAY SI2323DS-T1-GE3 晶体管, MOSFET, P沟道, -3.7 A, -20 V, 0.031 ohm, -4.5 V, -1 V
PDF

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