Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.015 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 8A
Technical parameters/rise time: 76 ns
Technical parameters/Input capacitance (Ciss): 2320pF @15V(Vds)
Technical parameters/descent time: 90 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Rail, Tube
Other/Manufacturing Applications: Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7101TRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
N 沟道 20 V 2 W 15 nC Hexfet 功率 MOSFET 表面贴装 - SOIC-8
|
||
IRF7416PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7416PBF. 晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
|
||
IRF7416PBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7416PBF. 晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
|
||
SI4435DYTRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON SI4435DYTRPBF 晶体管, MOSFET, P沟道, -8 A, -30 V, 0.015 ohm, 10 V, -1 V 新
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review