Technical parameters/rated voltage (DC): | -30.0 V |
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Technical parameters/rated current: | -8.00 A |
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Technical parameters/drain source resistance: | 0.035 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/product series: | SI4435DY |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | -8.00 A |
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Technical parameters/rise time: | 76 ns |
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Technical parameters/Input capacitance (Ciss): | 2320pF @15V(Vds) |
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Technical parameters/rated power (Max): | 2.5 W |
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Technical parameters/descent time: | 90 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
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