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Model SI4886DY-T1-E3
Description NChannel reduced Qg, fast switching MOSFET N-Channel reduced Qg, fast switching MOSFET
Product QR code
Brand: VISHAY
Packaging SO
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9727) Minimum order quantity(1)
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Technical parameters/drain source resistance: 10.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.56 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 13.0 A

Technical parameters/rated power (Max): 1.56 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO

External dimensions/packaging: SO

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

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