Technical parameters/drain source resistance: 10.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.56 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 13.0 A
Technical parameters/rise time: 5.00 ns
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4886DY-T1-E3
|
VISHAY | 功能相似 | SO |
MOSFET N-CH 30V 9.5A 8-SOIC
|
||
SI4886DY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 30V 9.5A 8-SOIC
|
||
SI4886DY-T1-GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET 30V 13A 2.95W 10mohm @ 10V
|
|||
SI4886DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET 30V 13A 2.95W 10mohm @ 10V
|
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