Technical parameters/drain source resistance: 140 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 3.00 W
Technical parameters/drain source voltage (Vds): -30.0 V
Technical parameters/breakdown voltage of gate source: ±25.0 V
Technical parameters/Continuous drain current (Ids): -9.20 A
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4825DDY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
Si4825DDY Series P-Channel 30V 12.5mOhm 5W Surface Mount Mosfet - SOIC-8
|
||
SI4825DDY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
Si4825DDY Series P-Channel 30V 12.5mOhm 5W Surface Mount Mosfet - SOIC-8
|
||
SI4825DY
|
Vishay Intertechnology | 功能相似 |
Trans MOSFET P-CH 30V 8.1A 8Pin SOIC
|
|||
SI4825DY
|
Visay | 功能相似 |
Trans MOSFET P-CH 30V 8.1A 8Pin SOIC
|
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