Technical parameters/drain source resistance: 36.0 mΩ
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 1.10 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 5.90 A
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4511DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET N/P-CH 20V 7.2A 8-SOIC
|
||
SI4532CDY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
VISHAY SILICONIX SI4532CDY-T1-GE3 场效应管, MOSFET, NP-通道, 30V, 6/-4.3A, SOIC-8
|
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