Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 5.1A
Technical parameters/Input capacitance (Ciss): 625pF @15V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4831BDY-T1-E3
|
Vishay Siliconix | 完全替代 | SO-8 |
MOSFET P-CH 30V 6.6A 8-SOIC
|
||
SI4831BDY-T1-E3
|
Vishay Intertechnology | 完全替代 |
MOSFET P-CH 30V 6.6A 8-SOIC
|
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