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Model SI4831BDY-T1-E3
Description MOSFET P-CH 30V 6.6A 8-SOIC
Product QR code
Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7678) Minimum order quantity(1)
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Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

2W (Ta), 3.3W (Tc)

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

-6.60 A

 

Technical parameters/Input capacitance (Ciss):

625pF @15V(Vds)

 

Technical parameters/dissipated power (Max):

2W (Ta), 3.3W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SO-8

 

Dimensions/Packaging:

SO-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4831BDY-T1-GE3 SI4831BDY-T1-GE3 VISHAY 完全替代 SOIC
MOSFET P-CH 30V 6.6A 8-SOIC
SI4831BDY-T1-GE3 SI4831BDY-T1-GE3 Vishay Siliconix 完全替代 SO-8
MOSFET P-CH 30V 6.6A 8-SOIC
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