Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.1W (Ta), 31W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 12.0 A
Technical parameters/Input capacitance (Ciss): 1610pF @15V(Vds)
Technical parameters/dissipated power (Max): 3.1W (Ta), 31W (Tc)
Encapsulation parameters/installation method: Surface Mount
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5418DU-T1-GE3
|
Vishay Semiconductor | 功能相似 | PowerPak-8 |
MOSFET N-CH 30V 12A PPAK CHIPFET
|
||
SI5418DU-T1-GE3
|
Vishay Siliconix | 功能相似 |
MOSFET N-CH 30V 12A PPAK CHIPFET
|
|||
SI5482DU-T1-E3
|
Vishay Siliconix | 完全替代 |
MOSFET N-CH 30V 12A PPAK CHIPFET
|
|||
SI5482DU-T1-E3
|
VISHAY | 完全替代 | PowerPAK® ChipFET Single |
MOSFET N-CH 30V 12A PPAK CHIPFET
|
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