Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 1610pF @15V(Vds)
Technical parameters/rated power (Max): 31 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: PowerPAK® ChipFET Single
External dimensions/packaging: PowerPAK® ChipFET Single
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5418DU-T1-GE3
|
Vishay Semiconductor | 功能相似 | PowerPak-8 |
MOSFET N-CH 30V 12A PPAK CHIPFET
|
||
SI5418DU-T1-GE3
|
Vishay Siliconix | 功能相似 |
MOSFET N-CH 30V 12A PPAK CHIPFET
|
|||
SI5482DU-T1-GE3
|
VISHAY | 完全替代 | PowerPAK |
MOSFET N-CH 30V 12A PPAK CHIPFET
|
||
SI5482DU-T1-GE3
|
Vishay Siliconix | 完全替代 |
MOSFET N-CH 30V 12A PPAK CHIPFET
|
|||
|
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 30V 12A PPAK CHIPFET
|
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