Technical parameters/drain source resistance: 0.032 Ω
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 1.1 W
Technical parameters/threshold voltage: 400 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 4.40 A
Technical parameters/thermal resistance: 90℃/W (RθJA)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1206
External dimensions/length: 3.1 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: 1206
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5515CDC-T1-GE3
|
Vishay Semiconductor | 类似代替 | 1206 |
Si5515CDC Series 20V 36mOhm 3.1W Surface Mount N & P-Channel Mosfet
|
||
SI5515CDC-T1-GE3
|
VISHAY | 类似代替 | 1206 |
Si5515CDC Series 20V 36mOhm 3.1W Surface Mount N & P-Channel Mosfet
|
||
SI5515DC-T1-GE3
|
VISHAY | 完全替代 | ChipFET-8 |
Trans MOSFET N/P-CH 20V 4.4A/3A 8Pin Chip FET T/R
|
||
SI5515DC-T1-GE3
|
Vishay Siliconix | 完全替代 | SMD-8 |
Trans MOSFET N/P-CH 20V 4.4A/3A 8Pin Chip FET T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review