Technical parameters/polarity: N+P
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 4.4A
Encapsulation parameters/Encapsulation: ChipFET-8
External dimensions/packaging: ChipFET-8
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5515CDC-T1-GE3
|
Vishay Semiconductor | 类似代替 | 1206 |
Si5515CDC Series 20V 36mOhm 3.1W Surface Mount N & P-Channel Mosfet
|
||
SI5515CDC-T1-GE3
|
VISHAY | 类似代替 | 1206 |
Si5515CDC Series 20V 36mOhm 3.1W Surface Mount N & P-Channel Mosfet
|
||
SI5515DC-T1-E3
|
Vishay Siliconix | 完全替代 | SMD-8 |
TRANSISTOR 4400mA, 20V, 2Channel, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, 1206-8, CHIPFET-8, FET General Purpose Small Signal
|
||
SI5515DC-T1-E3
|
Vishay Semiconductor | 完全替代 | 1206 |
TRANSISTOR 4400mA, 20V, 2Channel, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, 1206-8, CHIPFET-8, FET General Purpose Small Signal
|
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