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Model SI5915BDC-T1-GE3
Description MOSFET 2P-CH 8V 4A 1206-8
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Brand: Vishay Siliconix
Packaging SMD-8
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2627) Minimum order quantity(1)
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Technical parameters/drain source voltage (Vds): 8 V

Technical parameters/Input capacitance (Ciss): 420pF @4V(Vds)

Technical parameters/rated power (Max): 3.1 W

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SMD-8

External dimensions/packaging: SMD-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI5935CDC-T1-GE3 SI5935CDC-T1-GE3 Vishay Siliconix 类似代替 SMD-8
TRANSISTOR 4000mA, 20V, 2Channel, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8, FET General Purpose Small Signal
PDF
SI5935CDC-T1-GE3 SI5935CDC-T1-GE3 Vishay Intertechnology 类似代替
TRANSISTOR 4000mA, 20V, 2Channel, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8, FET General Purpose Small Signal

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