Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/Input capacitance (Ciss): | 455pF @10V(Vds) |
|
Technical parameters/rated power (Max): | 3.1 W |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SMD-8 |
|
Dimensions/Packaging: | SMD-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5915BDC-T1-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET 8V 4A 3.1W
|
|||
SI5915BDC-T1-E3
|
VISHAY | 类似代替 | CHIP |
MOSFET 8V 4A 3.1W
|
||
SI5935DC-T1-E3
|
Vishay Siliconix | 类似代替 | SMD-8 |
MOSFET DUAL P-CH 20V 3A 1206-8
|
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