Technical parameters/drain source voltage (Vds): 60 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Vishay Intertechnology | 类似代替 |
Dual N & P-Channel 60V 0.058/0.12Ω SMT TrenchFET Power Mosfet - SOIC-8
|
|||
SI4559ADY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET, N-Ch/P-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 4.5A, SO-8, Pd 3.4W
|
||
SI4559ADY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
MOSFET, N-Ch/P-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 4.5A, SO-8, Pd 3.4W
|
||
SI4559ADY-T1-GE3
|
Vishay Intertechnology | 类似代替 | SO-8 |
MOSFET, N-Ch/P-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 4.5A, SO-8, Pd 3.4W
|
||
SI4559EY
|
Visay | 类似代替 |
N-Channel 60V (D-S)/ 175C MOSFET
|
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