Technical parameters/drain source resistance: | 0.046 Ω |
|
Technical parameters/polarity: | N-Channel, P-Channel |
|
Technical parameters/dissipated power: | 2 W |
|
Technical parameters/threshold voltage: | 1 V |
|
Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/Continuous drain current (Ids): | 4.50 A |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 3.1 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4559ADY-T1-GE3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET, N-Ch/P-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 4.5A, SO-8, Pd 3.4W
|
||
SI4559ADY-T1-GE3
|
Vishay Semiconductor | 完全替代 | SOIC-8 |
MOSFET, N-Ch/P-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 4.5A, SO-8, Pd 3.4W
|
||
SI4559ADY-T1-GE3
|
Vishay Intertechnology | 完全替代 | SO-8 |
MOSFET, N-Ch/P-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 4.5A, SO-8, Pd 3.4W
|
||
SI4559EY
|
Visay | 类似代替 |
N-Channel 60V (D-S)/ 175C MOSFET
|
|||
SI7530DP-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N/P-CH 60V 3A PPAK SO-8
|
||
SI7530DP-T1-E3
|
VISHAY | 类似代替 | SO-8 |
MOSFET N/P-CH 60V 3A PPAK SO-8
|
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