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Model SI7454CDP-T1-GE3
Description MOSFET N-CH 100V 22A PPAK SO-8
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Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4612) Minimum order quantity(1)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 4.1W (Ta), 29.7W (Tc)

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Input capacitance (Ciss): 580pF @50V(Vds)

Technical parameters/dissipated power (Max): 4.1W (Ta), 29.7W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7454DDP-T1-GE3 SI7454DDP-T1-GE3 VISHAY 功能相似 SO-8
VISHAY SI7454DDP-T1-GE3 晶体管, MOSFET, N沟道, 21 A, 100 V, 0.027 ohm, 10 V, 1.5 V
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