Technical parameters/drain source resistance: 2.5 MΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 5 W
Technical parameters/threshold voltage: 0.4V ~ 1V
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/Continuous drain current (Ids): 40A
Technical parameters/rise time: 53 ns
Technical parameters/Input capacitance (Ciss): 5760pF @6V(Vds)
Technical parameters/rated power (Max): 48 W
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 5000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAKSO-8
External dimensions/packaging: PowerPAKSO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7858ADP-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 12V 20A PPAK SO-8
|
||
SI7858ADP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 12V 20A PPAK 8SOIC
|
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