Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.9W (Ta)
Technical parameters/drain source voltage (Vds): 12.0 V
Technical parameters/Continuous drain current (Ids): 20.0 A
Technical parameters/Input capacitance (Ciss): 5700pF @6V(Vds)
Technical parameters/dissipated power (Max): 1.9W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 6.15 mm
External dimensions/width: 5.15 mm
External dimensions/height: 1.04 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7858ADP-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 12V 20A PPAK SO-8
|
||
SI7858BDP-T1-GE3
|
VISHAY | 功能相似 | PowerPAKSO-8 |
MOSFET N-CH 12V 40A 8SOIC
|
||
SI7858BDP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 12V 40A 8SOIC
|
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