Technical parameters/dissipated power: 156W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Input capacitance (Ciss): 527pF @100V(Vds)
Technical parameters/dissipated power (Max): 156W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHP8N50D-GE3
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
MOSFET N-CH 500V 8.7A TO220AB
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review