Technical parameters/working voltage: 5.8 V
Technical parameters/breakdown voltage: 6.45 V
Technical parameters/clamp voltage: 13.4 V
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 6.45 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA
External dimensions/packaging: DO-214AA
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive grade
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
P6SMB6.8A-E3/52
|
Vishay Semiconductor | 类似代替 | DO-214AA |
VISHAY P6SMB6.8A-E3/52 二极管, TVS, 5W, 5.8V, 单向, DO-214AA-2
|
||
P6SMB6.8A-E3/5B
|
Vishay Semiconductor | 类似代替 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SM6T6V8A-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器表面安装单向 600W,SM6T 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SM6T6V8A-E3/52
|
VISHAY | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器表面安装单向 600W,SM6T 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
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