Technical parameters/breakdown voltage: | 6.45 V |
|
Technical parameters/clamp voltage: | 10.5 V |
|
Technical parameters/test current: | 10 mA |
|
Technical parameters/peak pulse power: | 600 W |
|
Technical parameters/minimum reverse breakdown voltage: | 6.45 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-214AA |
|
Dimensions/Length: | 4.57 mm |
|
Dimensions/Width: | 3.94 mm |
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Dimensions/Height: | 2.24 mm |
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Dimensions/Packaging: | DO-214AA |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | General |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
P6SMB6.8A-E3/52
|
Vishay Semiconductor | 类似代替 | DO-214AA |
VISHAY P6SMB6.8A-E3/52 二极管, TVS, 5W, 5.8V, 单向, DO-214AA-2
|
||
SM6T6V8CA-E3/52
|
Vishay Dale | 完全替代 |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W，Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻，带增量浪涌 ### 瞬态电压抑制器，Vishay Semiconductor
|
|||
SM6T6V8CA-E3/52
|
VISHAY | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W，Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻，带增量浪涌 ### 瞬态电压抑制器，Vishay Semiconductor
|
||
TPSMB6.8AHE3/52T
|
VISHAY | 完全替代 | SMB |
表面贴装汽车瞬态电压抑制器 Surface Mount Automotive Transient Voltage Suppressors
|
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