Technical parameters/working voltage: 26 V
Technical parameters/breakdown voltage: 28.9 V
Technical parameters/dissipated power: 1 W
Technical parameters/clamp voltage: 42.1 V
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 28.9 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA-2
External dimensions/packaging: DO-214AA-2
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive grade
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
General Semiconductor | 完全替代 |
TRANSZORB® 瞬态电压抑制器表面安装单向 600W，SMBJ 系列，Vishay Semiconductor ### 瞬态电压抑制器，Vishay Semiconductor
|
|||
SMBJ26A-E3/5B
|
VISHAY | 类似代替 | DO-214AA |
DIODE 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2Pin, Transient Suppressor
|
||
SMBJ26A-E3/5B
|
Vishay Semiconductor | 类似代替 | DO-214AA |
DIODE 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2Pin, Transient Suppressor
|
||
SMBJ26A-M3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA-2 |
ESD 抑制器/TVS 二极管 26V 1000W UniDir TransZorb 5% Tol
|
||
SMBJ26A-M3/5B
|
VISHAY | 完全替代 | SMB |
ESD 抑制器/TVS 二极管 26V 1000W UniDir TransZorb 5% Tol
|
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