Technical parameters/clamp voltage: 42.1 V
Technical parameters/Maximum reverse voltage (Vrrm): 26V
Technical parameters/test current: 1 mA
Technical parameters/maximum reverse breakdown voltage: 28.9 V
Technical parameters/peak pulse power: 600 W
Technical parameters/breakdown voltage: 28.9 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: -55℃ ~ 150℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA
External dimensions/packaging: DO-214AA
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3200
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
P6SMB30A R5G
|
Taiwan Semiconductor | 功能相似 | DO-214AA |
Diode TVS Single Uni-Dir 25.6V 600W 2Pin SMB T/R
|
||
SMBJ26A-E3/51
|
Vishay Semiconductor | 完全替代 | DO-214AA |
TVS 600W 26V UNIDIRECT SMB
|
||
SMBJ26A-E3/51
|
VISHAY | 完全替代 | SMB |
TVS 600W 26V UNIDIRECT SMB
|
||
|
|
General Semiconductor | 完全替代 |
TRANSZORB® 瞬态电压抑制器表面安装单向 600W,SMBJ 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
|||
SMBJ26AHE3/5B
|
VISHAY | 完全替代 | DO-214AA |
DIODE 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2Pin, Transient Suppressor
|
||
SMBJ26AHE3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA |
DIODE 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2Pin, Transient Suppressor
|
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