Technical parameters/breakdown voltage: 28.9 V
Technical parameters/clamp voltage: 42.1 V
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 28.9 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA-2
External dimensions/length: 4.57 mm
External dimensions/width: 3.94 mm
External dimensions/height: 2.44 mm
External dimensions/packaging: DO-214AA-2
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Automotive grade
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ26CA-E3/52
|
Vishay Semiconductor | 类似代替 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SMBJ26CA-E3/5B
|
Vishay Semiconductor | 类似代替 | DO-214AA |
Diode TVS Single Bi-Dir 26V 600W 2Pin SMB T/R
|
||
SMBJ26CAHE3/52
|
VISHAY | 类似代替 | DO-214AA |
TRANSZORB® 瞬态电压抑制器表面安装双向 600W,SMBJ 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review