Technical parameters/breakdown voltage: | 28.9 V |
|
Technical parameters/clamp voltage: | 42.1 V |
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Technical parameters/peak pulse power: | 600 W |
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Technical parameters/minimum reverse breakdown voltage: | 28.9 V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-214AA |
|
Dimensions/Width: | 3.94 mm |
|
Dimensions/Packaging: | DO-214AA |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | General |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ26CA-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W，Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻，带增量浪涌 ### 瞬态电压抑制器，Vishay Semiconductor
|
||
SMBJ26CA-M3/5B
|
VISHAY | 完全替代 | SMB |
Diode TVS Single Bi-Dir 26V 600W 2Pin SMB T/R
|
||
SMBJ26CAHE3/52
|
VISHAY | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器表面安装双向 600W，SMBJ 系列，Vishay Semiconductor ### 瞬态电压抑制器，Vishay Semiconductor
|
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