Technical parameters/Maximum reverse voltage (Vrrm): 70V
Technical parameters/peak pulse power: 600 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SMB
External dimensions/packaging: SMB
Compliant with standards/RoHS standards: Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ70CA-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SMBJ70CA-E3/52
|
Vishay Dale | 完全替代 |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
|||
SMBJ70CA-E3/5B
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 70V 600W 2Pin SMB T/R
|
||
SMBJ70CA-E3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 70V 600W 2Pin SMB T/R
|
||
SMBJ70CAHE3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 70V 600W 2Pin SMB T/R
|
||
SMBJ70CAHE3/52
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 70V 600W 2Pin SMB T/R
|
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