Technical parameters/operating voltage: | 70 V |
|
Technical parameters/breakdown voltage: | 77.8 V |
|
Technical parameters/clamp voltage: | 113 V |
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Technical parameters/peak pulse power: | 600 W |
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Technical parameters/minimum reverse breakdown voltage: | 77.8 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-214AA |
|
Dimensions/Packaging: | DO-214AA |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Automotive grade |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ70CA-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SMBJ70CA-E3/52
|
Vishay Dale | 完全替代 |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
|||
SMBJ70CA-M3/52
|
VISHAY | 完全替代 | SMB |
Diode TVS Single Bi-Dir 70V 600W 2Pin SMB T/R
|
||
SMBJ70CA-M3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 70V 600W 2Pin SMB T/R
|
||
SMBJ70CAHE3/5B
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 70V 600W 2Pin SMB T/R
|
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