Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 94.4 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA
External dimensions/packaging: DO-214AA
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ85A-E3/52
|
Vishay Siliconix | 完全替代 | 2 |
TRANSZORB® 瞬态电压抑制器表面安装单向 600W,SMBJ 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SMBJ85A-E3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 85V 600W 2Pin SMB T/R
|
||
SMBJ85AHE3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 85V 600W 2Pin SMB T/R
|
||
SMBJ85AHE3/5B
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 85V 600W 2Pin SMB T/R
|
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