Technical parameters/operating voltage: | 85 V |
|
Technical parameters/breakdown voltage: | 94.4 V |
|
Technical parameters/clamp voltage: | 137 V |
|
Technical parameters/peak pulse power: | 600 W |
|
Technical parameters/minimum reverse breakdown voltage: | 94.4 V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-214AA |
|
Dimensions/Packaging: | DO-214AA |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | General |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ85A-E3/52
|
Vishay Siliconix | 完全替代 | 2 |
TRANSZORB® 瞬态电压抑制器表面安装单向 600W,SMBJ 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SMBJ85A-M3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 85V 600W 2Pin SMB T/R
|
||
SMBJ85AHE3/52
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 85V 600W 2Pin SMB T/R
|
||
SMBJ85AHE3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 85V 600W 2Pin SMB T/R
|
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