Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.2A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/packaging: SOT-363
Other/Product Lifecycle: End of Life
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MBT3904DW1T1
|
ON Semiconductor | 类似代替 | SOT-363 |
双路通用晶体管 Dual General Purpose Transistors
|
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MBT3904DW1T3G
|
ON Semiconductor | 类似代替 | SOT-363 |
NPN 晶体管,最大 1A,On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。 ### 双极性晶体管,On Semiconductor ON Semiconductor 的各种双极晶体管,包括以下类别: 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
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