Technical parameters/rated voltage (DC): | 40.0 V |
|
Technical parameters/rated current: | 200 mA |
|
Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
|
Technical parameters/Maximum allowable collector current: | 0.2A |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @10mA, 1V |
|
Technical parameters/rated power (Max): | 150 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 150 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-363 |
|
Dimensions/Packaging: | SOT-363 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
Customs information/HTS code: | 8541210075 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MBT3904DW1T1G
|
ON Semiconductor | 完全替代 | SC-70-6 |
ON SEMICONDUCTOR MBT3904DW1T1G 双极晶体管阵列, 通用, NPN, 40 V, 150 mW, 200 mA, 300 hFE, SOT-363
|
||
MBT3904DW1T3G
|
ON Semiconductor | 完全替代 | SOT-363 |
NPN 晶体管，最大 1A，On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
|
||
SMBT3904S
|
Infineon | 类似代替 | SOT-363 |
SMBT3904S 双NPN 60V 0.2A 300MHZ HEF=30~300 SOT363 代码 1A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review