Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.50 W
Technical parameters/drain source voltage (Vds): 300 V
Technical parameters/Continuous drain current (Ids): 350 mA
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STN1HNK60
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN1HNK60 功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
|
||
|
|
Zetex | 功能相似 | SOT-223-3 |
ZVN2120GTA 编带
|
||
ZVN2120GTA
|
Diodes | 功能相似 | TO-261-4 |
ZVN2120GTA 编带
|
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