Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 80.0 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 190W (Tc)
Technical parameters/input capacitance: 3.14 nF
Technical parameters/gate charge: 80.0 nC
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 80.0 A
Technical parameters/rise time: 29 ns
Technical parameters/Input capacitance (Ciss): 3140pF @25V(Vds)
Technical parameters/descent time: 28 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 190W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3-1
External dimensions/packaging: TO-220-3-1
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75339P3
|
Intersil | 功能相似 |
FAIRCHILD SEMICONDUCTOR HUF75339P3 晶体管, MOSFET, N沟道, 75 A, 55 V, 12 mohm, 10 V, 4 V
|
|||
HUF75339P3
|
Fairchild | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR HUF75339P3 晶体管, MOSFET, N沟道, 75 A, 55 V, 12 mohm, 10 V, 4 V
|
||
HUF75339P3
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR HUF75339P3 晶体管, MOSFET, N沟道, 75 A, 55 V, 12 mohm, 10 V, 4 V
|
||
STW20N65M5
|
ST Microelectronics | 功能相似 | TO-247-3 |
N 通道 MDmesh™ M5 系列，STMicroelectronics MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。 ### MOSFET 晶体管，STMicroelectronics
|
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