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Model STW20N65M5
Description N Channel MDmesh ™ M5 series, STMicroelectronics MDmesh M5 power MOSFET optimized for high-power PFC and PWM topologies. The main features include low-pass loss per silicon area and low gate charge per silicon wafer area. They are designed for energy-efficient, compact, and reliable hard switching applications such as solar converters, consumer product power supplies, and electronic lighting controls. ###MOSFET transistor, STMicroelectronics
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Brand: ST Microelectronics
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
5.51  yuan 5.51yuan
10+:
$ 6.6096
100+:
$ 6.2791
500+:
$ 6.0588
1000+:
$ 6.0478
2000+:
$ 6.0037
5000+:
$ 5.9486
7500+:
$ 5.9046
10000+:
$ 5.8825
Quantity
10+
100+
500+
1000+
2000+
Price
$6.6096
$6.2791
$6.0588
$6.0478
$6.0037
Price $ 6.6096 $ 6.2791 $ 6.0588 $ 6.0478 $ 6.0037
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1763) Minimum order quantity(10)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 190 mΩ

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 130 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/leakage source breakdown voltage: 650 V

Technical parameters/Continuous drain current (Ids): 18A

Technical parameters/rise time: 7.5 ns

Technical parameters/Input capacitance (Ciss): 1345pF @100V(Vds)

Technical parameters/rated power (Max): 130 W

Technical parameters/descent time: 7.5 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 130W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/length: 15.75 mm

External dimensions/width: 5.15 mm

External dimensions/height: 20.15 mm

External dimensions/packaging: TO-247-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STW18NM80 STW18NM80 ST Microelectronics 类似代替 TO-247-3
STMICROELECTRONICS STW18NM80 功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
PDF
STW26NM60N STW26NM60N ST Microelectronics 类似代替 TO-247-3
STMICROELECTRONICS STW26NM60N 功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
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