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Model STW18NM80
Description STMICROELECTRONICS STW18NM80 功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
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Brand: ST Microelectronics
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
14.84  yuan 14.84yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1225) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.25 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

190 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

800 V

 

Technical parameters/rise time:

28 ns

 

Technical parameters/Input capacitance (Ciss):

2070pF @50V(Vds)

 

Technical parameters/rated power (Max):

190 W

 

Technical parameters/descent time:

50 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

190W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-247-3

 

Dimensions/Length:

15.75 mm

 

Dimensions/Width:

5.15 mm

 

Dimensions/Height:

20.15 mm

 

Dimensions/Packaging:

TO-247-3

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Industrial, Power Management, Power Management, Industrial

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

Customs Information/Hong Kong Import and Export License:

NLR

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STW25NM60ND STW25NM60ND ST Microelectronics 类似代替 TO-247-3
N 通道 FDmesh™ 功率 MOSFET，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
PDF
STW26NM60N STW26NM60N ST Microelectronics 类似代替 TO-247-3
STMICROELECTRONICS STW26NM60N 功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
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