Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.13 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 160 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 2400 pF
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 21A
Technical parameters/rise time: 30 ns
Technical parameters/Input capacitance (Ciss): 2400pF @50V(Vds)
Technical parameters/rated power (Max): 160 W
Technical parameters/descent time: 40 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 160W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.75 mm
External dimensions/width: 5.15 mm
External dimensions/height: 20.15 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Industry, Power Management, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STW18NM80
|
ST Microelectronics | 类似代替 | TO-247-3 |
STMICROELECTRONICS STW18NM80 功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
|
||
STW26NM60N
|
ST Microelectronics | 类似代替 | TO-247-3 |
STMICROELECTRONICS STW26NM60N 功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
|
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